Navitas Semiconductor has introduced a 4.5 kW AI data centre power supply reference design. This design, featuring optimised GaNSafe and Gen-3 ‘Fast’ (G3F) SiC power components, achieves an impressive power density of 137 W/in³ and over 97% efficiency.
Next-generation AI GPUs such as NVIDIA’s Blackwell B100 and B200 require over 1 kW of power each for high-power computation, which is three times more than traditional CPUs. These new requirements are increasing power-per-rack specifications from 30-40 kW to up to 100 kW.
Navitas announced its AI Power Roadmap in March 2024, showcasing advanced data centre power solutions to meet the growing demand in AI and high-performance computing (HPC) systems. The initial design was a GaNFast-based 3.2 kW AC-DC converter in the Common Redundant Power Supply (CRPS) form factor, as defined by the hyperscale Open Compute Project.
The 3.2 kW CRPS185 (185 mm in length) achieved a 40% reduction in size compared to equivalent legacy silicon solutions and easily surpassed the ‘Titanium Plus’ efficiency benchmark, which is critical for data centre operations and required by European regulations.
The new 4.5 kW CRPS185 design showcases how GaNSafe power ICs and GeneSiC Gen-3 ‘Fast’ (G3F) MOSFETs enable the highest power density and efficiency. Central to the design is an interleaved CCM totem-pole PFC using SiC with a full-bridge LLC topology employing GaN, leveraging the strengths of each semiconductor technology for high frequency, cooler operation, optimised reliability, and superior power density and efficiency.
The 650 V G3F SiC MOSFETs utilise ‘trench-assisted planar’ technology, delivering outstanding performance over temperature for maximum system efficiency and reliability.
For the LLC stage, 650 V GaNSafe power ICs stand out in the industry with their integrated power, protection, control, and drive in a robust, thermally adept TOLL power package. These ICs exhibit extremely low switching losses, transient-voltage capability up to 800 V, and other high-speed advantages such as low gate charge (Qg), output capacitance (COSS), and no reverse-recovery loss (Qrr).
High-speed switching reduces the size, weight, and cost of passive components in a power supply, including transformers, capacitors, and EMI filters. As power density increases, next-generation GaN and SiC offer sustainability benefits through system efficiency improvements and ‘dematerialisation’, leading to CO2 reductions.
The 3.2 kW and 4.5 kW platforms have attracted significant market interest, with over 30 data centre customer projects in development, expected to generate substantial GaN and SiC revenue, ramping up from 2024 into 2025.
Navitas’ AI data centre power supply reference designs accelerate customer development, reduce time-to-market, and set new benchmarks in energy efficiency, power density, and system cost. These platforms come with complete design collateral, including fully tested hardware, embedded software, schematics, bills of materials, layout, simulation, and hardware test results.
“AI is dramatically accelerating power requirements of data centers, processors and anywhere AI is going in the decades to come creating a significant challenge for our industry. Our system design center has stepped up to this challenge delivering a 3x increase in power in less than 18 months”, said Gene Sheridan, CEO of Navitas Semiconductor. “Our latest GaNFast technology, combined with our G3F SiC technology are delivering the highest power density and efficiency the world has ever seen…the perfect solution for the Blackwell AI processors and beyond.”
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