Harnessing heat for the Internet of Things

In a study published in Nature Communications, researchers from Osaka University, along with their collaborators, have made a significant advancement in thermoelectric conversion from semiconductors.

This development holds the potential to optimise the efficiency and sustainability of the global digital transformation, particularly impacting the rapidly evolving Internet of Things (IoT).

The Internet of Things, a network where objects sense their environment and communicate via the Internet, is rapidly transforming everyday life. From smart traffic lights to interconnected home devices, the IoT’s expansion is inexorable. However, as these technologies develop and the global population rises, a critical question emerges: what will power this digital world of tomorrow? The answer might lie in an often-overlooked resource – heat.

The research team, including lead authors Yuto Uematsu and Yoshiaki Nakamura, has innovated a two-dimensional electron gas (2DEG) system using gallium arsenide, which significantly differs from conventional thermoelectric conversion methods. This new system not only enhances the conversion of heat to electricity but also improves electron mobility in its 2D sheet, directly benefiting everyday devices like semiconductors.

(a) Multiple subband in triangular quantumwell (TQW), (b) Single subband in rectangular quantum well (RQW), and (c) the experimental thermoelectric power factor enhancement rate relative to the theoretical one of conventional 2DEG (PF2D/3D)ex/(PF2D/3D)th. The unit value indicates the thermoelectric power factor enhancement of the conventional 2DEG
Credit: Yoshiaki Nakamura

The team’s research has led to a fourfold increase in the power factor of thermoelectric conversion compared to existing 2DEG systems, surpassing other technologies like resonant scattering in efficiency. This improvement is crucial for practical applications, particularly for the IoT, where energy supplies need to be local and small-scale.

The findings could pave the way for sustainable power sources for the IoT. Thin thermoelectric films on gallium arsenide substrates could be ideally suited for IoT applications, powering remote environmental monitoring systems or wearable medical devices. The versatility of this technology means it could be applied to a wide range of element-based materials, opening up extensive practical applications.

“We’re excited because we have expanded upon the principles of a process that is crucial to clean energy and the development of a sustainable IoT,” remarks Yoshiaki Nakamura, the senior author of the study. This advancement in thermoelectric conversion is not just a leap in clean energy generation; it represents a pivotal step towards a sustainable, interconnected world where the IoT can thrive without the constraints of traditional energy sources.